METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS HAVING HIGH PERFORMANCE AND METHODS OF MANUFACTURING THE SAME

摘要

Disclosed are a thin film transistor with high performance and a manufacturing method thereof. The thin film transistor according to one embodiment of the present invention includes a gate electrode which is formed on a substrate, a gate insulation layer which is formed on the gate electrode, a channel layer which is formed on the gate insulation layer, a first electrode which covers one end of the channel layer, a second electrode which covers the other end of the channel layer, and a protective layer which covers the channel layer between the first and second electrodes. The channel layer includes an In-rich metal oxide layer. The protective layer is a single layer or multiple layers and includes at least aluminum oxide. The channel layer is processed by O2 HPA before or after the protective layer is formed.