| 摘要 |
PROBLEM TO BE SOLVED: To provide dual-dielectric MIM capacitors for system-on-chip applications.SOLUTION: An integrated circuit structure includes a chip having a first region and a second region. A first metal-insulator-metal (MIM) capacitor is formed in the first region. The first MIM capacitor has a first bottom electrode, a first top electrode over the first bottom electrode, and a first capacitor insulator between and adjoining the first bottom electrode and the first top electrode. A second MIM capacitor is in the second region and is substantially level with the first MIM capacitor. The second MIM capacitor has a second bottom electrode, a second top electrode over the second bottom electrode, and a second capacitor insulator between and adjoining the second bottom electrode and the second top electrode. The second capacitor insulator is different from the first capacitor insulator. The first top electrode and the first bottom electrode may be formed simultaneously with the second top electrode and the second bottom electrode, respectively. |
