| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having split-gate MONOS memory cells such that disturb resistance in writing by an SSI method is improved and the area of a memory module is reduced by improving the disturb resistance of a non-selected memory cell.SOLUTION: On a side surface of a memory gate electrode 12, an insulating film 10 is formed between a charge storage layer 9 and an insulating film 11, and a total thickness of the insulating films 10 and 11 on the side surface of the memory gate electrode 12 is made larger than a thickness of the insulating film 11 under a bottom part of the memory gate electrode 12.</p> |
