CIRCUIT INCLUDING A RESISTIVE ELEMENT, A DIODE, AND A SWITCH AND A METHOD OF USING THE SAME

摘要

An ESD protection element can have a high ESD protection characteristic which has a desired breakdown voltage and flows a large discharge current. A junction diode is formed by an N+ type buried layer having a proper impurity concentration and a P+ type buried layer. The P+ type buried layer is combined with a P+ type drawing layer to penetrate an N− type epitaxial layer and be connected to an anode element. An N+ type diffusion layer and a P+ typed diffusion layer connected to an surrounding the N+ type diffusion layer are formed in the N− epitaxial layer surrounded by the P+ type buried layer etc. The N+ type diffusion layer and P+ type diffusion layer are connected to a cathode electrode. An ESD protection element is formed by the PN junction diode and a parasitic PNP bipolar transistor which uses the P+ type diffusion layer as an emitted, the N− type epitaxial layer as the base, and the P+ type drawing layer etc. as the collector.

主权项

1. An integrated circuit comprising:
a resistive element having a first terminal and a second terminal, wherein the first terminal is coupled to a first power supply terminal; a diode having an anode and a cathode, wherein the cathode is coupled to the second terminal of the resistive element, and the anode is coupled to a second power supply terminal; and a switch having a first current terminal, a second current terminal, and a control electrode, wherein the control electrode is coupled to the second terminal of the resistive element and the cathode of the diode.