发明名称 ORGANIC THIN-FILM TRANSISTOR, AND PREPARATION METHOD AND PREPARATION DEVICE THEREFOR
摘要 <p>Disclosed are an organic thin-film transistor, and a preparation method and preparation device therefor. The preparation method for the thin-film transistor comprises: forming a gate electrode, a gate insulating layer, an organic semiconductor layer and a source-drain electrode on a substrate, wherein the step for forming the organic semiconductor layer comprises: blade coating a solution in which an organic semiconductor material used for forming the organic semiconductor layer is dissolved so as to form the organic semiconductor layer. The preparation method can avoid the difference between the edge and the centre of the substrate due to the influence of centripetal force when using a spin coating process, thereby improving the yield of organic thin-film transistor devices.</p>
申请公布号 WO2014131220(A1) 申请公布日期 2014.09.04
申请号 WO2013CN73772 申请日期 2013.04.07
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 QIU, LONGZHEN;FENG, XIANG;WANG, XIANGHUA;LIU, ZE
分类号 H01L51/10;H01L51/40 主分类号 H01L51/10
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