| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for achieving favorable ion implantation.SOLUTION: A method for carrying out an integrated circuit flow process is provided, which includes: (a) a sub-step of preparing a substrate 1 having a topography showing a relief 2; (b) a sub-step of conformally disposing an antireflective film 3 on the substrate, in which the disposition step includes a molecular layer deposition step and the antireflective film 3 includes one of the following compounds (i) and (ii); and (c) a sub-step of disposing a photoresist layer 4 on the antireflective film 3. The compounds are: (i) an organic compound chemically bound to an inorganic compound, where one of the organic compound and the inorganic compound is bound to the substrate and where the organic compound absorbs light at least at one wavelength selected in the range from 150 to 500 nm; and (ii) a monodisperse organic compound absorbing light at least at one wavelength selected in the range from 150 to 500 nm. |
