发明名称 |
Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces |
摘要 |
Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate. |
申请公布号 |
US2014245946(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201414193962 |
申请日期 |
2014.02.28 |
申请人 |
Massachusetts Institute of Technology |
发明人 |
Kong Jing;Li Lain-Jong;Lee Yi-Hsien |
分类号 |
C30B25/18 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for producing a metal dichalcogenide layer on a transfer substrate, comprising:
seeding aromatic molecules on a surface of a growth substrate; growing a layer of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules; and contacting the seeded aromatic molecules with a solvent that releases the metal dichalcogenide from the growth substrate. |
地址 |
Cambridge MA US |