发明名称 Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces
摘要 Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.
申请公布号 US2014245946(A1) 申请公布日期 2014.09.04
申请号 US201414193962 申请日期 2014.02.28
申请人 Massachusetts Institute of Technology 发明人 Kong Jing;Li Lain-Jong;Lee Yi-Hsien
分类号 C30B25/18 主分类号 C30B25/18
代理机构 代理人
主权项 1. A method for producing a metal dichalcogenide layer on a transfer substrate, comprising: seeding aromatic molecules on a surface of a growth substrate; growing a layer of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules; and contacting the seeded aromatic molecules with a solvent that releases the metal dichalcogenide from the growth substrate.
地址 Cambridge MA US