| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that it is difficult to secure breakdown voltage at a periphery part (a peripheral region, a junction terminal region), the voltage being equal to or greater than that of a body cell part (an active region), by a conventional periphery termination structure or a RESURF (Reduced Surface Field) structure, since concentration of the cell part in a super junction structure becomes comparatively high.SOLUTION: A semiconductor device comprises a power MOSFET having a super junction structure formed on a cell part by a trench filling method. In the semiconductor device, super junction structures having orientations aligned with individual sides of a drift region around the cell part are provided in the drift region. |
