| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring pattern exceeding the resolution limit of lithography, and to provide a method of manufacturing the semiconductor device without increasing the number of processes.SOLUTION: According to an embodiment, the semiconductor device comprises: an insulating film provided on a semiconductor substrate; a plurality of wiring lines which are formed on the insulating film and arranged in a line-and-space shape; and a sidewall insulating film formed on a sidewall of the wiring lines. The plurality of wiring lines are isolated from one another by the sidewall insulating film, and the center lines of the plural wiring lines are constantly spaced in a cross section in a direction perpendicular to the extending direction of the plural wiring lines. With regard to the plural wiring lines, adjacent wiring lines have alternately different heights. |
