| 摘要 |
PROBLEM TO BE SOLVED: To easily inspect whether or not a polymer material is appropriately applied, and estimate a correction amount of an application condition.SOLUTION: A pattern formation method according to an embodiment includes: forming a physical guide that includes a first pattern in a first region on a lower layer film and includes a second pattern in a second region; embedding a polymer material in a recess part of the physical guide; forming a self-organization pattern having a first polymer part and a second polymer part by micro-phase separating the polymer material; observing the self-organization pattern in the second region; selectively removing the first polymer part and processing the lower layer film using the physical guide and the second polymer part as a mask when it is determined from a result of the observation that the self-organization pattern in the first region has a predetermined shape. The second pattern includes a pattern, whose coverage ratio is greater than that of the first pattern, and a pattern, whose coverage ratio is smaller than that of the first pattern. |
