Fabrication of Free Standing Membranes and Use Thereof for Synthesis of Nanoparticle Patterns

摘要

The present disclosure discloses a method of fabrication of free standing open pore membranes with uniform pore size and shape and ordered pore distribution, and its use for synthesis of nanoparticle patterns. The method includes applying a photoresist layer to the top surface of a substrate, heating the photoresist layer for a period of time, and exposing the photoresist layer to a dose of ultraviolet radiation through a mask having a predetermined pattern. The dose of ultraviolet radiation is controlled in intensity and time and the photoresist layer is exposed such that a top portion of the photoresist layer through which the dose of ultraviolet radiation enters the photoresist layer undergoes greater cross linking than a bottom portion of the photoresist layer immediately adjacent to the top surface of the substrate such that a cross linking gradient develops through a thickness of the photoresist layer. The mask is removed and the membrane is readily detached from the top surface of the substrate since the portion of the membrane adjacent to the top surface is less cross linked than the top surface of the membrane. The detached membrane forms a free standing patterned membrane having a preselected pattern of open pores. The method can be used with positive photoresist materials as well when deposited on a UV transparent substrate so that the photoresist can be exposed to UV from its top with photomask and UV exposure from its back of the transparent substrate without the photomask.

主权项

1. A method of fabrication of free standing polymeric membranes using negative photoresist, comprising the steps of:
a) providing a substrate having a top surface and applying a negative photoresist layer to the top surface of the substrate; b) heating the photoresist layer for a period of time; c) exposing the photoresist layer from a top surface thereof to a dose of ultraviolet radiation through a mask having a predetermined pattern, controlling an intensity of the dose of ultraviolet radiation and controlling a time the photoresist layer is exposed to the dose of radiation such that a top portion of the photoresist layer through which the dose of ultraviolet radiation enters the photoresist layer undergoes greater cross linking than a bottom portion of the photoresist layer immediately adjacent to the top surface of the substrate such that a cross linking gradient develops through a thickness of the photoresist layer; d) removing the mask, e) heating the photoresist layer for another period of time again; and f) dipping the substrate and photoresist into a developer solution, and detaching the membrane from the top surface of the substrate to form a free standing patterned membrane having a preselected pattern of open pores reflective of the pattern of the mask.