| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve device properties by reducing gate resistance of a power MISFET.SOLUTION: A semiconductor device comprises: a gate electrode GE which is electrically connected to gate parts each composed of a polycrystalline silicon film in a plurality of grooves formed on a chip region CA in a Y direction in a stripe shape, and which is formed by a film of the same layer with the source electrode SE electrically connected to source regions formed among the stripe-shaped grooves. In addition, the gate electrode GE includes a gate electrode part G1 formed along a periphery of the chip region CA and a gate finger part G2 arranged to divide the chip region CA in an X direction into two. The source electrode SE includes a part located on an upper part of the gate finger part G2 and a part located on a lower part of the gate finger part G2. The gate electrode GE and the source electrode SE are connected to a lead frame via bump electrodes.</p> |
