| 主权项 |
1. A method for producing a semiconductor device, comprising:
forming a first resist pattern capable of supplying an acid, with a first resist composition, on a semiconductor substrate; forming a second resist layer by coating a second resist composition containing a crosslinking material that is crosslinked in the presence of an acid, an acid amplifier, and a solvent, on the first resist pattern; forming a crosslinked portion in the second resist layer by diffusing an acid from the first resist pattern into the second resist layer; and removing a portion of the second resist layer that is not crosslinked. |
