发明名称 VAPOR DEPOSITION REACTION VESSEL AND THIN FILM FORMATION METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a closed-loop-type vapor deposition reaction vessel which performs a series of processes inside, which includes steps of: a source precursor or a reaction precursor being absorbed on a substrate; a physical adsorption molecular layer being desorbed; and the desorbed molecular layer being discharged to outside.SOLUTION: A vapor deposition reaction vessel includes at least one first injection part 11 which injects reaction material to a concavity part of a first part 10 of the vapor deposition reaction vessel. A second part 20 is connected to a first space part and has a concavity part connected to the concavity part of the first part. The concavity part of the second part is maintained to a state in which pressure is lower than that within the first space part. A third part 30 is connected to the second space part, and a discharge part 32 is connected to a third space part.</p>
申请公布号 JP2014159636(A) 申请公布日期 2014.09.04
申请号 JP20140046472 申请日期 2014.03.10
申请人 VEECO ALD INC 发明人 LEE SANG IN
分类号 C23C16/455;H01L21/28;H01L21/285 主分类号 C23C16/455
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