| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device and method for manufacturing the same are provided. A metal pad can be electrically connected to metal interconnections in a lower portion of the device. A passivation layer can be provided and can exposes a portion of the metal pad, and a buffer layer can be formed on lateral sides of the passivation layer. |
| 申请公布号 |
US2014246774(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201313832038 |
申请日期 |
2013.03.15 |
| 申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
CHOI Nam Gon |
| 分类号 |
H01L23/498;H01L21/50 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a metal pad electrically connected to metal interconnections in a lower portion of the semiconductor device; a passivation layer exposing a portion of the metal pad wherein the passivation layer is formed in a step shape with oblique lateral sides; and a buffer layer formed on the lateral sides of the passivation layer. |
| 地址 |
Seoul KR |
