发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL |
摘要 |
An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge Vb being not less than 1.60 and not more than 2.83. |
申请公布号 |
US2014246087(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201414278171 |
申请日期 |
2014.05.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Hiraga Hiroki;Shibasaki Soichiro;Nakagawa Naoyuki;Yamazaki Mutsuki;Yamamoto Kazushige;Sakurada Shinya;Inaba Michihiko |
分类号 |
H01L31/032;H01L31/0224;H01L31/068 |
主分类号 |
H01L31/032 |
代理机构 |
|
代理人 |
|
主权项 |
1. A photoelectric conversion element, comprising:
a first electrode having optical transparency; a second electrode; and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction; wherein the n-type portion comprises a dopant which has a formal charge Vb being not less than 1.60 and not more than 2.83 and being represented by a Formula (1),Vb=∑j=1nexp(r0-riBf)(1) where a bond length between the first element and the second element is ri angstrom when the first element is substituted with the dopant, a bond parameter between the first element and the second element is r0 angstrom, an identification number determined by a combination between the first element and the second element is Bf angstrom, a number of neighboring bonds of the second element to the first element is n which is an integer and not less than one. |
地址 |
Tokyo JP |