| 摘要 |
PROBLEM TO BE SOLVED: To achieve reduction of a dark current and suppression of a smear signal in a solid-state image sensor.SOLUTION: A solid-state image sensor as a first aspect of the present disclosure comprises: a photoelectric conversion unit which generates an electric charge by photoelectric conversion according to incident light; and a processing unit which is formed of a wide band gap semiconductor material having a wider band gap than a semiconductor material forming the photoelectric conversion unit and processes the electric charge generated by the photoelectric conversion unit. The present disclosure is applicable to, for example, a solid-state image sensor such as a CCD or a CMOS, an imaging device mounted with the solid-state image sensor, and an electronic device mounted with an imaging unit having the solid-state image sensor. |
