MIXED VALENT OXIDE MEMORY AND METHOD

摘要

Memory devices and methods of forming include a mixed valent oxide located between a first electrode and a second electrode. Implantation of a metal below a surface of one of the electrodes allows formation of the mixed valent oxide with a direct interface to the electrode. An intermetallic oxide can be subsequently formed between the mixed valent oxide and the electrode by annealing the structure.

主权项

1. A method, comprising:
implanting metal ions below a surface of a platinum electrode; implanting oxygen below the surface of the platinum electrode; forming a mixed valent oxide using the platinum electrode as a seed layer; annealing to move the metal ions and oxygen from below the surface of the platinum electrode to an interface between the mixed valent oxide and the platinum electrode; and combining the metal ions and the implanted oxygen to form an intermetallic oxide at the interface.