RETICLE DEFECT CORRECTION BY SECOND EXPOSURE

摘要

Correction of reticle defects, such as EUV reticle defects, is accomplished with a second exposure. Embodiments include obtaining a reticle with a first pattern corresponding to a design for a wafer pattern, detecting dark defects and/or design/OPC weak spots in the first pattern, exposing a resist covered wafer using the reticle, and exposing the wafer using a second reticle with a second pattern or a second image field with openings corresponding to the dark defects, with a repair pattern on the reticle or on another reticle, or with a programmed e-beam or laser writer.

主权项

1. A method comprising:
obtaining a reticle; detecting dark defects and/or design/OPC weak spots on the reticle; programming an e-beam or laser writer to expose a wafer in regions corresponding to the dark defects and/or design/OPC weak spots on the reticle; and exposing the wafer, covered with a resist, with the reticle and with the programmed e-beam or laser writer.