Semiconductor Device with Charge Compensation Structure

摘要

A semiconductor device is provided. The semiconductor device includes a semiconductor body having a main surface. In a vertical cross-section which is substantially orthogonal to the main surface the semiconductor body includes a vertical trench, an n-type silicon semiconductor region, and two p-type silicon semiconductor regions each of which adjoins the n-type silicon semiconductor region and is arranged between the n-type silicon semiconductor region and the main surface. The vertical trench extends from the main surface at least partially into the n-type silicon semiconductor region and includes a compound semiconductor region which includes silicon and germanium and is arranged between the two p-type silicon semiconductor regions. The compound semiconductor region and the two p-type silicon semiconductor regions include n-type dopants and p-type dopants. An integrated concentration of the n-type dopants of the compound semiconductor region is larger than an integrated concentration of the p-type dopants of the compound semiconductor region.

主权项

1. A semiconductor device, comprising:
a semiconductor body having a main surface, in a vertical cross-section which is substantially orthogonal to the main surface, the semiconductor body comprising:
an n-type silicon semiconductor region;two p-type silicon semiconductor regions each of which adjoins the n-type silicon semiconductor region and is arranged between the n-type silicon semiconductor region and the main surface; anda vertical trench extending from the main surface at least partially into the n-type silicon semiconductor region and comprising a compound semiconductor region which comprises silicon and germanium and is arranged between the two p-type silicon semiconductor regions, wherein the compound semiconductor region and the two p-type silicon semiconductor regions comprise n-type dopants and p-type dopants, and an integrated concentration of the n-type dopants of the compound semiconductor region is larger than an integrated concentration of the p-type dopants of the compound semiconductor region.