| 摘要 |
<p>[Problem] To provide a composition which can form a fine negative photoresist pattern which does not have problems of surface roughness, bridge defects, lack of resolution, etc., and to provide a pattern forming method using same. [Solution] Given a negative resist pattern formed using a chemically amplified resist composition, this fine pattern-forming composition is used to make a pattern finer by being applied to the negative resist pattern to thicken the resist pattern. This composition contains a solvent, and a polymer mixture or polymer including an amino group in the repeating unit, and further either contains a specific amount of acid, or exhibits a specific pH. Further, the polymer mixture contains multiple polymers having a 3 or greater HSP distance determined from the Hansen solubility parameters. This composition is coated onto a negative photoresist pattern obtained by developing with an organic solvent developer and is heated, thereby forming a fine pattern.</p> |
