| 摘要 |
Provided is a semiconductor device that is provided with: a semiconductor substrate; a composite metal film, which is formed on the front surface or the rear surface of the semiconductor substrate, and has a first metal film and a second metal film bonded to the first metal film, said second metal film having a Seebeck coefficient different from that of the first metal film; and a detecting terminal that can detect a difference between potential of the first metal film and that of the second metal film. |
