Three-Dimensional Integrated Circuit (3DIC)

摘要

An embodiment 3DIC device includes a semiconductor chip, a die, and a polymer. The semiconductor chip includes a semiconductor substrate, wherein the semiconductor substrate comprises a first edge, and a dielectric layer over the semiconductor substrate. The die is disposed over and bonded to the semiconductor chip. The polymer is molded onto the semiconductor chip and the die. The polymer includes a portion level with the dielectric layer, wherein the portion of the polymer comprises a second edge vertically aligned to the first edge of the semiconductor substrate and a third edge contacting the dielectric layer, wherein the second and the third edges are opposite edges of the portion of the polymer.

主权项

1. A method comprising:
performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer, and wherein the trench is in a scribe line between two neighboring chips in the wafer; filling a polymer into the trench; curing the polymer; and after the step of curing the polymer, performing a die saw to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench and wherein a non-vertical portion of a terminal surface of the polymer in the trench interfaces with a semiconductor substrate of the wafer after the die saw.