发明名称 |
LASER SYSTEM AND METHOD FOR PROCESSING SAPPHIRE |
摘要 |
Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter "QCW laser"). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire. |
申请公布号 |
WO2014134470(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
WO2014US19460 |
申请日期 |
2014.02.28 |
申请人 |
IPG PHOTONICS CORPORATION |
发明人 |
KANCHARLA, VIJAY;SHINER, WILLIAM;MAYNARD, STEVEN;SERCEL, JEFFREY P.;MENDES, MARCO;SARRAFI, ROUZBEH |
分类号 |
B23K26/00;B23K26/36;G02B5/30 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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