METHOD FOR PRODUCING SEMICONDUCTOR DEVICE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a robus power semiconductor device.SOLUTION: The method includes a step of carrying out a first implantation, in order to produce two differently doped semiconductor zones 22, 23 of the same conductivity type, for implanting dopant atoms of a first conductivity type into a semiconductor body via one of sides over the whole area; a step of producing a mask on the one side so as to partially expose the one surface; a step of removing at least a dopant implanted portion by moving from the one side into the region exposed by the mask in the semiconductor body; and a step of removing the mask. Before or after removing the mask, a second implantation is carried out for implanting the dopant atoms of the first conductivity type into the semiconductor body via one of sides.