| 发明名称 |
CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM |
| 摘要 |
A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction. |
| 申请公布号 |
US2014248783(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201414192165 |
申请日期 |
2014.02.27 |
| 申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KAMEDA Kenji;SONOBE Jun;TADAKI Yudai |
| 分类号 |
H01L21/02;H01L21/67 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A cleaning method comprising:
providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to an interior of the process container by supplying a cleaning gas into the process container after performing the process, wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction. |
| 地址 |
Paris FR |
