| 摘要 |
An electrostatic discharge (ESD) protection device (1) is provided with a silicon substrate (10) and a redistribution layer (20). Titanium/copper/titanium electrodes (23A, 23B) of the redistribution layer (20) are electrically connected, via contact holes (22A, 22B), to an ESD protection circuit having aluminum electrode films (111 to 113, 121, 131) formed on a surface of the silicon substrate (10). The aluminum electrode film (121) is electrically connected to the titanium/copper/titanium electrode (23A), and the aluminum electrode film (131) is electrically connected to the titanium/copper/titanium electrode (23B). A diode forming area (141) is formed between the aluminum electrode films (111 and 121), and a diode forming area (144) is formed between the aluminum electrode films (112 and 131). The titanium/copper/titanium electrode (24A) does not overlap with the diode forming area (144), and the titanium/copper/titanium electrode (24B) overlaps with the diode forming area (141).A semiconductor device capable of reducing parasitic capacitances and capable of being applied to higher frequency bands is thus provided. |
