METHODS OF FORMING DUAL GATE STRUCTURES

摘要

Semiconductor devices including dual gate structures and methods of forming such semiconductor devices are disclosed. For example, semiconductor devices are disclosed that include a first gate stack that may include a first conductive gate structure formed from a first material, and a second gate stack that may include a dielectric structure formed from an oxide of the first material. For another example, methods including forming a high-K dielectric material layer over a semiconductor substrate, forming a first conductive material layer over the high-K dielectric material layer, oxidizing a portion of the first conductive material layer to convert the portion of the first conductive material layer to a dielectric material layer, and forming a second conductive material layer over both the conductive material layer and the dielectric material layer are also disclosed.

主权项

1. A method of forming a dual gate structure, the method comprising:
forming a high-K dielectric material on a semiconductor substrate; forming a metal nitride material on the high-K dielectric material; exposing a portion of the metal nitride material to an oxidizing environment to convert the portion of the metal nitride material to a region of metal oxynitride material without converting another portion of the metal nitride material; and forming a conductive material on the region of metal oxynitride material and the another portion of the metal nitride material.