| 摘要 |
<p>A metal oxide thin film transistor incorporating reduced hydrogen silicon-containing layers and methods of making the same are disclosed herein. The thin film transistor can include a substrate, a metal oxide semiconductor layer, a substantially hydrogen free channel interface layer and a cap layer comprising silicon formed over the channel interface layer. The method for making a thin film transistor can include depositing a metal oxide semiconductor layer over a substrate, activating a deposition gas comprising SiF4 to create an activated deposition gas, delivering the activated deposition gas to the substrate to deposit a channel interface layer comprising SiOF and depositing a cap layer over the channel interface layer and the metal oxide thin film transistor layer.</p> |
