发明名称 TEMPERATURE SENSOR WITH LAYERED ARCHITECTURE
摘要 <p>Temperature sensor comprising: - two branches (A, B), each branch comprising at least two transistors (TA1, TA2; TB1, TB2) connected as diodes and cascaded so that the emitter of the transistor (TA1) of a first layer (L1) of a branch (A) is connected to the collector of the transistor (TA2) of a second layer (L2) of the same branch (A), - current providing means (CS) for providing a current (ibias) to both branches, an analog-to-digital convertor (ADC) for capturing a voltage (ΔVAB) between emitters of the transistors (TA2, TB2) of a same layer (L2) of both branches and converting said voltage to a digital temperature signal.</p>
申请公布号 WO2014131607(A1) 申请公布日期 2014.09.04
申请号 WO2014EP52560 申请日期 2014.02.10
申请人 ST-ERICSSON SA 发明人 KOHOLA, JUKKA;PESSA, MARKO
分类号 G01K7/01;G05F3/30 主分类号 G01K7/01
代理机构 代理人
主权项
地址