METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for manufacturing a semiconductor device which facilitates control of etching during contact hole formation.SOLUTION: A semiconductor device includes at least a semiconductor layer formed on an insulating surface, a first insulating layer formed on the semiconductor layer, a gate electrode formed on the first insulating layer, and a second insulating layer formed on the gate electrode. An opening is formed in at least the semiconductor layer and the second insulating layer to partially expose the insulating surface. The semiconductor device also includes a conductive layer formed on the second insulating layer via the opening. The conductive layer is electrically connected to the semiconductor layer at a side surface of the opening formed in the semiconductor layer.