| 发明名称 |
METHOD OF ACCESSING SEMICONDUCTOR MEMORY AND SEMICONDUCTOR CIRCUIT |
| 摘要 |
A method of accessing a semiconductor memory is disclosed which includes outputting a row address and an active command to the semiconductor memory; outputting a column address and a read or write command to the semiconductor memory; and outputting a spare access command to the semiconductor memory to access data from a spare memory cell at a timing based on an additive latency of the semiconductor memory. Related devices and systems are also disclosed. |
| 申请公布号 |
US2014247677(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201314081493 |
申请日期 |
2013.11.15 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
SOHN Young-Soo;PARK Chul-Woo;KANG Uk-Song;SON Jong-Pil |
| 分类号 |
G11C11/4076;G11C29/48 |
主分类号 |
G11C11/4076 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of accessing a semiconductor memory, the method comprising:
outputting a row address and an active command to the semiconductor memory; outputting a column address and a read or write command to the semiconductor memory; and outputting a spare access command to the semiconductor memory to access data from a spare memory cell at a timing based on an additive latency of the semiconductor memory. |
| 地址 |
Suwon-si KR |
