发明名称 |
Compensation for Sub-Block Erase |
摘要 |
A non-volatile memory system that has two or more sub-blocks in a block performs a check before accessing memory cells to see if the condition of a sub-block that is not being accessed could affect the memory cells being accessed. If such a sub-block is found then parameters used to access the cells may be modified according to a predetermined scheme. |
申请公布号 |
US2014247660(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201414279037 |
申请日期 |
2014.05.15 |
申请人 |
SanDisk Technologies Inc. |
发明人 |
Avila Chris;Dong Yingda;Mui Man Lung |
分类号 |
G11C16/16 |
主分类号 |
G11C16/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of adaptively operating a three dimensional non-volatile memory formed in multiple layers of memory cells disposed above a substrate, comprising:
operating at least some blocks of the three dimensional non-volatile memory using a sub-block erase scheme to separately erase cells of a sub-block in a block which includes other memory cells connected in series with the cells of the sub-block which retain data throughout the separate erasing of the sub-block; identifying a plurality of memory cells to be accessed in an operation, the plurality of memory cells located in a first sub-block of a target block; identifying a second sub-block that is in the target block, memory cells of the second sub-block connected in series with memory cells of the first sub-block; determining a condition of the second sub-block as written or erased; and subsequently, if the second sub-block is written then selecting a first set of parameters for accessing the plurality of memory cells in the operation; and if the second sub-block is erased then selecting a second set of parameters for accessing the plurality of memory cells in the operation, the second set of parameters being different from the first set of parameters. |
地址 |
Plano TX US |