发明名称 Compensation for Sub-Block Erase
摘要 A non-volatile memory system that has two or more sub-blocks in a block performs a check before accessing memory cells to see if the condition of a sub-block that is not being accessed could affect the memory cells being accessed. If such a sub-block is found then parameters used to access the cells may be modified according to a predetermined scheme.
申请公布号 US2014247660(A1) 申请公布日期 2014.09.04
申请号 US201414279037 申请日期 2014.05.15
申请人 SanDisk Technologies Inc. 发明人 Avila Chris;Dong Yingda;Mui Man Lung
分类号 G11C16/16 主分类号 G11C16/16
代理机构 代理人
主权项 1. A method of adaptively operating a three dimensional non-volatile memory formed in multiple layers of memory cells disposed above a substrate, comprising: operating at least some blocks of the three dimensional non-volatile memory using a sub-block erase scheme to separately erase cells of a sub-block in a block which includes other memory cells connected in series with the cells of the sub-block which retain data throughout the separate erasing of the sub-block; identifying a plurality of memory cells to be accessed in an operation, the plurality of memory cells located in a first sub-block of a target block; identifying a second sub-block that is in the target block, memory cells of the second sub-block connected in series with memory cells of the first sub-block; determining a condition of the second sub-block as written or erased; and subsequently, if the second sub-block is written then selecting a first set of parameters for accessing the plurality of memory cells in the operation; and if the second sub-block is erased then selecting a second set of parameters for accessing the plurality of memory cells in the operation, the second set of parameters being different from the first set of parameters.
地址 Plano TX US