发明名称 FILM-FORMING APPARATUS AND FILM-FORMING METHOD
摘要 A film-forming apparatus (100) includes: a vacuum chamber (30) configured to store a substrate (34B) in which a through-hole is formed and a source of copper emission (35B); a vacuum pump (36) configured to decompress an interior of the vacuum chamber (30) to a predetermined degree of vacuum; a power supply (80) configured to generate electric power applied to the substrate (34B); and a driving mechanism for use in setting a distance between the substrate (34B) and the source of copper emission (35B). When a copper material emitted from the source of copper emission (35B) is deposited on one main surface of the substrate (34B) to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.
申请公布号 US2014246325(A1) 申请公布日期 2014.09.04
申请号 US201214234589 申请日期 2012.05.22
申请人 Tsuchiya Takayuki;Marunaka Masao;Koizumi Yasuhiro;Kondo Kazuo 发明人 Tsuchiya Takayuki;Marunaka Masao;Koizumi Yasuhiro;Kondo Kazuo
分类号 C23C28/02;C23C14/34;C23C14/14 主分类号 C23C28/02
代理机构 代理人
主权项 1. A film-forming apparatus comprising: a vacuum chamber configured to store a substrate in which a through-hole is formed and a source of copper emission; a vacuum pump configured to decompress an interior of the vacuum chamber to a predetermined degree of vacuum; a power supply configured to generate electric power applied to the substrate; and a driving mechanism for use in setting a distance between the substrate and the source of copper emission, wherein when a copper material emitted from the source of copper emission is deposited on one main surface of the substrate to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.
地址 Hyogo JP