| 发明名称 |
NITROGEN-CONTAINING OXIDE FILM AND METHOD OF FORMING THE SAME |
| 摘要 |
A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %). |
| 申请公布号 |
US2014246758(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201313782382 |
申请日期 |
2013.03.01 |
| 申请人 |
Company Ltd. Taiwan Semiconductor Manufacturing |
发明人 |
Tu An-Chun;Hwang Chih-Hong;Lu Yi Hsien;Chen Chun-Heng;Li Chen-Chien;Wu Chih-Jen;Chang-Liao Kuei-Shu;Huang Chen-Ming |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method, comprising:
(a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %). |
| 地址 |
US |
