MULTI-TIERED SEMICONDUCTOR DEVICES AND ASSOCIATED METHODS

摘要

Methods of fabricating multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, a first dielectric is formed, and a second dielectric is formed in contact with the first dielectric. A channel is formed through the first dielectric and the second dielectric with a first etch chemistry, a void is formed in the first dielectric with a second etch chemistry, and a device is formed at least partially in the void in the first dielectric. Additional embodiments are also described.

主权项

1. An apparatus comprising:
a plurality of tiers of a first dielectric interleaved with a plurality of devices, each device being disposed between adjacent ones of the tiers of the first dielectric; and residual second dielectric on one of the tiers of the first dielectric.