发明名称 IMAGE SENSOR HAVING THIN DARK SHIELD
摘要 An image sensor and method of manufacturing the same are provided. The image sensor can include a pixel array region having an active pixel area and a dark pixel area surrounding the active pixel area. A dark shield can be formed in the dark pixel area to inhibit light. Dark pixels can be provided under the dark shield. The dark shield can include a thin film including silicon chromium (SiCr).
申请公布号 US2014246714(A1) 申请公布日期 2014.09.04
申请号 US201313803122 申请日期 2013.03.14
申请人 DONGBU HITEK CO., LTD. 发明人 LEE Chang Eun
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor, comprising: a pixel array region comprising an active pixel area and a dark pixel area surrounding the active pixel area, wherein the dark pixel area comprises a dark shield to inhibit light and a dark pixel under the dark shield, and wherein the dark shield is a thin film comprising silicon chromium (SiCr).
地址 Seoul KR