| 发明名称 |
Resistive Switching Devices Having a Switching Layer And An Intermediate Electrode Layer and Methods of Formation Thereof |
| 摘要 |
In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node. |
| 申请公布号 |
US2014246641(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201313829941 |
申请日期 |
2013.03.14 |
| 申请人 |
ADESTO TECHNOLOGIES CORPORATION |
发明人 |
Jameson, III John R.;Sanchez John E.;Lee Wei Ti;Ma Yi;Gopinath Venkatesh P.;Koushan Foroozan Sarah |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A resistive switching device comprising:
a first electrode coupled to a first potential node, the first electrode disposed over a substrate; a switching layer disposed over the first electrode; a conductive amorphous layer disposed over the switching layer; and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node. |
| 地址 |
US |
