INCOHERENT TYPE-III MATERIALS FOR CHARGE CARRIERS CONTROL DEVICES
摘要
A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.
申请公布号
WO2014134310(A1)
申请公布日期
2014.09.04
申请号
WO2014US19032
申请日期
2014.02.27
申请人
THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE;GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC.;TSU, RAPHAEL;DIETZ, NIKOLAUS;FERGUSON, IAN