| 摘要 |
<p>A method of filling vias and trenches in a dual damascene structure with a filling comprising copper or copper alloy is provided. An electroless deposition filling of the vias with a via filling comprising copper or copper alloy is provided. A trench barrier layer comprising Mn or Al is formed over the via filling. The trench barrier layer is annealed at a temperature that causes a component of the trench barrier layer to pass into the via filling. The trenches are filled with the trench filling comprising copper or copper alloy.</p> |
