High-K Film Apparatus and Method

摘要

Disclosed herein is a method forming a device comprising forming a high-k layer over a substrate and applying a dry plasma treatment to the high-k layer and removing at least a portion of one or more impurity types from the high-k layer. The dry plasma treatment may be chlorine, fluorine or oxygen plasma treatment. A cap layer may be applied on the high-k layer and a metal gate formed on the cap layer. An interfacial layer may optionally be formed on the substrate, with the high-k layer is formed on the interfacial layer. The high-k layer may have a dielectric constant greater than 3.9, and the cap layer may optionally be titanium nitride. The plasma treatment may be applied after the high-k layer is applied and before the cap layer is applied or after the cap layer is applied.

主权项

1. A method of forming a device, comprising:
forming a high-k layer over a substrate; forming a conductive cap layer on the high-k layer; removing at least a portion of one or more impurity types from the high-k layer and the conductive cap layer with a first reactive plasma treatment; and forming a metal gate directly on the conductive cap layer.