发明名称 |
WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE |
摘要 |
A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed. |
申请公布号 |
US2014246727(A1) |
申请公布日期 |
2014.09.04 |
申请号 |
US201414280751 |
申请日期 |
2014.05.19 |
申请人 |
International Business Machines Corporation |
发明人 |
Liang Yue;Guo Dechao;Henson William K.;Narasimha Shreesh;Wang Yanfeng |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor substrate comprising a first device region and a second device region; a p-type semiconductor device in the first device region comprising a first gate structure and a first source region and a first drain region on opposing sides of the first gate structure having a p-type conductivity, wherein the first gate structure comprises a first gate conductor layer overlying a first high-k gate dielectric layer; and an n-type semiconductor device in the second device region comprising a second gate structure and a second source region and a second drain region on opposing sides of the second gate structure having an n-type conductivity, wherein the second gate structure comprises a second gate conductor layer overlying a second high-k gate dielectric layer, wherein a carbon dopant at a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the second high-k gate dielectric layer and the semiconductor substrate. |
地址 |
Armonk NY US |