FEPT-C-BASED SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

摘要

Provided is an FePt-C-based sputtering target with which a thin film that contains an FePt-based alloy and is capable of being used as a magnetic recording medium can be formed independently without using a plurality of targets, the FePt-C-based sputtering target forming very few of the particles commonly generated during sputtering. The FePt-C-based sputtering target contains Fe, Pt, and C, wherein the FePt-C-based sputtering target is configured so that the C atoms of primary particles that contain unavoidable impurities are dispersed so as to not be in contact with each other in an FePt-based alloy phase containing 33-60 at% Pt, with the balance of the FePt-based alloy phase being Fe and the unavoidable impurities.