| 摘要 |
<p>Provided are a thin film transistor substrate and a method of manufacturing the same. The thin film transistor substrate includes a gate electrode located on an insulating substrate, a gate insulating layer located on the gate electrode, a source/drain electrode located on the gate insulating layer, and an oxide semiconductor layer which is located between the gate insulating layer and the source/drain electrode and includes a first part which does not touch the source/drain electrode and has a defined channel region and a second part which touches the source/drain electrode and has a defined contact region. The second part can include a first oxide semiconductor layer and a second oxide semiconductor layer located on the first oxide semiconductor layer.</p> |
