发明名称 SUBSTRATE HEAT TREATMENT APPARATUS, SUBSTRATE HEAT TREATMENT METHOD, AND RECORDING MEDIUM FOR HEAT TREATING SUBSTRATE
摘要 Provided are an apparatus which promptly heats a substrate, a method therefor, and a recording medium. The substrate heat treatment apparatus (2) comprises: a heat plate (40); a heat plate rotating device (60); a substrate elevating device (70); and a control unit (21). The heat plate (40) comprises: a plate-shape unit which has flexibility and faces a horizontally arranged surface (Wa) of a wafer (W) by having a gap from the wafer; and a plurality of grooves with the spiral shape arranged beneath the plate-shape unit and extended from the center of the plate-shape unit toward the edge of the circumference. The control unit (21) controls the heat plate rotating device (60) to rotate the heat plate (40) in a direction that the groove is extended from the center of the plate-shape unit and the substrate elevating device (70) to closely dispose the wafer (W) and the heat plate (40).
申请公布号 KR20140106420(A) 申请公布日期 2014.09.03
申请号 KR20140020504 申请日期 2014.02.21
申请人 TOKYO ELECTRON LIMITED 发明人 TSURUDA TOYOHISA
分类号 H01L21/324 主分类号 H01L21/324
代理机构 代理人
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