| 摘要 |
<p>[Problem] To significantly reduce processing time of a step of adsorbing dye in a porous semiconductor layer on a substrate surface. [Solution] A flow of a dye solution is formed in a gap between solution guide surface (92L, 92R) of a nozzle (20) and a substrate (G) during the treatment, and a porous semiconductor layer of a treated surface of the substrate is subject to dye adsorption treatment in this flow of the dye solution. Furthermore, impact pressure from slit-like discharge openings (88L, 88R) and pressure of turbulent flow in groove-like uneven sections (92L, 92R) act in the vertical direction in addition to the flow of the dye solution. Thus, aggregation and association of the dye are hardly caused on a surface part of the porous semiconductor layer of the treated surface of the substrate, the dye efficiently penetrates deeply into the porous semiconductor layer, and the dye adsorption into the porous semiconductor layer proceeds at high speed.</p> |
