发明名称 |
CRUCIBLE, APPARATUS, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS |
摘要 |
<p>The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.</p> |
申请公布号 |
EP2405038(B1) |
申请公布日期 |
2014.09.03 |
申请号 |
EP20100748793 |
申请日期 |
2010.02.25 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORPORATION |
发明人 |
KATSUNO, MASAKAZU;FUJIMOTO, TATSUO;TSUGE, HIROSHI;NAKABAYASHI, MASASHI |
分类号 |
C30B23/00;C30B23/06;C30B29/06;C30B29/36;H01L21/02;H01L21/203 |
主分类号 |
C30B23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|