摘要 |
<p>Provided are a photoelectric device and a method of manufacturing the photoelectric device. The photoelectric device includes: a semiconductor substrate that is formed of monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed in the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon. Accordingly, carrier recombination loss due to defects of the semiconductor substrate may be reduced, and an open-circuit voltage may be increased. Also, as an emitter and a base that separate and collect carriers are formed of monocrystalline silicon like the semiconductor substrate, carrier collecting efficiency and photoelectric conversion efficiency may be improved.
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申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
LEE, DOO-YOUL;PARK, SANG-JIN;KANG, YOON-MOOK;KIM, HYOENG-KI;MO, CHAN-BIN;PARK, YOUNG-SANG;SEO, KYOUNG-JIN;KIM, MIN-SUNG;HONG, JUN-KI;LIM, HEUNG-KYOON;SONG, MIN-CHUL;PARK, SUNG-CHAN;KIM, DONG-SEOP |