发明名称 |
METHOD FOR THE DIRECT BONDING OF A SILICON OXIDE LAYER |
摘要 |
<p>A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm−1, is equal to or higher than about 1.5×10−5 nm−1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).</p> |
申请公布号 |
EP2771910(A1) |
申请公布日期 |
2014.09.03 |
申请号 |
EP20120775520 |
申请日期 |
2012.10.24 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
SABBIONE, CHIARA;DI CIOCCIO, LÉA;NIETO, JEAN-PIERRE;VANDROUX, LAURENT |
分类号 |
H01L21/762;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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