| 摘要 |
A light-emitting diode arrangement may include a first layer structure including at least one epitaxially formed light-emitting diode, and at least one second layer structure including at least one epitaxially formed light-emitting diode, wherein the at least one second layer structure is arranged on the first layer structure, and wherein contact faces of the at least one epitaxially formed light-emitting diode in the respective layer structure face contact faces of the at least one epitaxially formed light-emitting diode of the layer structure arranged directly therebelow or thereabove. |
